A high‐performance full swing 1‐bit hybrid full adder cell

Abstract This study proposes an 18‐transistor full adder (FA) cell based on the full swing hybrid logic style. It has a first stage comprising the XOR‐XNOR module followed by pass transistors and inverters to generate the sum and carry outputs. The performance evaluation of the proposed FA cell has...

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Main Authors: Shahbaz Hussain, Mehedi Hasan, Gazal Agrawal, Mohd Hasan
Format: Article
Language:English
Published: Hindawi-IET 2022-05-01
Series:IET Circuits, Devices and Systems
Subjects:
Online Access:https://doi.org/10.1049/cds2.12097
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author Shahbaz Hussain
Mehedi Hasan
Gazal Agrawal
Mohd Hasan
author_facet Shahbaz Hussain
Mehedi Hasan
Gazal Agrawal
Mohd Hasan
author_sort Shahbaz Hussain
collection DOAJ
description Abstract This study proposes an 18‐transistor full adder (FA) cell based on the full swing hybrid logic style. It has a first stage comprising the XOR‐XNOR module followed by pass transistors and inverters to generate the sum and carry outputs. The performance evaluation of the proposed FA cell has been carried out using an HSPICE simulator at the 16 nm process node by comparing it with eight existing FAs over the supply voltage ranging from 0.4 to 1.0 V. The proposed adder achieved 34.77% improvement in propagation delay, 48.8% improvement in average power and 66.58% improvement in Power Delay Product compared to the conventional CMOS Mirror adder while operating at 0.8 V. Moreover, its performance metrics are also better than those of other latest existing adder cells. Hence, the proposed FA is suitable for modern high performance digital processors.
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spelling doaj.art-62a191b85e8e4efaab9847a39ab482532024-10-03T07:51:12ZengHindawi-IETIET Circuits, Devices and Systems1751-858X1751-85982022-05-0116321021710.1049/cds2.12097A high‐performance full swing 1‐bit hybrid full adder cellShahbaz Hussain0Mehedi Hasan1Gazal Agrawal2Mohd Hasan3Department of Electronics Engineering Aligarh Muslim University Aligarh Uttar Pradesh IndiaDepartment of Electrical and Computer Engineering North South University Dhaka BangladeshDepartment of Electronics Engineering Aligarh Muslim University Aligarh Uttar Pradesh IndiaDepartment of Electronics Engineering Aligarh Muslim University Aligarh Uttar Pradesh IndiaAbstract This study proposes an 18‐transistor full adder (FA) cell based on the full swing hybrid logic style. It has a first stage comprising the XOR‐XNOR module followed by pass transistors and inverters to generate the sum and carry outputs. The performance evaluation of the proposed FA cell has been carried out using an HSPICE simulator at the 16 nm process node by comparing it with eight existing FAs over the supply voltage ranging from 0.4 to 1.0 V. The proposed adder achieved 34.77% improvement in propagation delay, 48.8% improvement in average power and 66.58% improvement in Power Delay Product compared to the conventional CMOS Mirror adder while operating at 0.8 V. Moreover, its performance metrics are also better than those of other latest existing adder cells. Hence, the proposed FA is suitable for modern high performance digital processors.https://doi.org/10.1049/cds2.12097logic gateslogic designadderscarry logicSPICEperformance evaluation
spellingShingle Shahbaz Hussain
Mehedi Hasan
Gazal Agrawal
Mohd Hasan
A high‐performance full swing 1‐bit hybrid full adder cell
IET Circuits, Devices and Systems
logic gates
logic design
adders
carry logic
SPICE
performance evaluation
title A high‐performance full swing 1‐bit hybrid full adder cell
title_full A high‐performance full swing 1‐bit hybrid full adder cell
title_fullStr A high‐performance full swing 1‐bit hybrid full adder cell
title_full_unstemmed A high‐performance full swing 1‐bit hybrid full adder cell
title_short A high‐performance full swing 1‐bit hybrid full adder cell
title_sort high performance full swing 1 bit hybrid full adder cell
topic logic gates
logic design
adders
carry logic
SPICE
performance evaluation
url https://doi.org/10.1049/cds2.12097
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