Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering

Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering

This work reports on the properties of GaN films grown by reactive magnetron sputtering onto glass substrate kept at relatively low temperature (400°C), using different RF power applied to the Ga target. Their structural, morphological, vibrational and optical properties were characterized by X-ray...

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Bibliographic Details
Main Authors: R. S. de Oliveira, H. A. Folli, I. M. Horta, B. S. Damasceno, J. H. C. Augstrose, W. Miyakawa, A. L. J. Pereira, M. Massi, A. S. da Silva Sobrinho, D. M. G. Leite
Format: Article
Language:English
Published: Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) 2023-07-01
Series:Materials Research
Subjects:
GaN
reactive sputtering
buffer layer
glass substrate
Online Access:http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392023000100282&tlng=en
Description
Summary:This work reports on the properties of GaN films grown by reactive magnetron sputtering onto glass substrate kept at relatively low temperature (400°C), using different RF power applied to the Ga target. Their structural, morphological, vibrational and optical properties were characterized by X-ray diffraction, atomic force and scanning electron microscopies, Raman spectroscopy and UV-vis spectrophotometry. The films have wurtzite phase with strong preferential orientation in the c-axis direction. Moreover, two clear contributions to the (0002) diffraction peak could be found, indicating the presence of two different morphologies, which were discussed in terms of the formation of an intermediate layer between the substrate and a dominating columnar-like microstructured film.
ISSN:1516-1439

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