Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering
This work reports on the properties of GaN films grown by reactive magnetron sputtering onto glass substrate kept at relatively low temperature (400°C), using different RF power applied to the Ga target. Their structural, morphological, vibrational and optical properties were characterized by X-ray...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)
2023-07-01
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| Series: | Materials Research |
| Subjects: | |
| Online Access: | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392023000100282&tlng=en |
| _version_ | 1797777962383179776 |
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| author | R. S. de Oliveira H. A. Folli I. M. Horta B. S. Damasceno J. H. C. Augstrose W. Miyakawa A. L. J. Pereira M. Massi A. S. da Silva Sobrinho D. M. G. Leite |
| author_facet | R. S. de Oliveira H. A. Folli I. M. Horta B. S. Damasceno J. H. C. Augstrose W. Miyakawa A. L. J. Pereira M. Massi A. S. da Silva Sobrinho D. M. G. Leite |
| author_sort | R. S. de Oliveira |
| collection | DOAJ |
| description | This work reports on the properties of GaN films grown by reactive magnetron sputtering onto glass substrate kept at relatively low temperature (400°C), using different RF power applied to the Ga target. Their structural, morphological, vibrational and optical properties were characterized by X-ray diffraction, atomic force and scanning electron microscopies, Raman spectroscopy and UV-vis spectrophotometry. The films have wurtzite phase with strong preferential orientation in the c-axis direction. Moreover, two clear contributions to the (0002) diffraction peak could be found, indicating the presence of two different morphologies, which were discussed in terms of the formation of an intermediate layer between the substrate and a dominating columnar-like microstructured film. |
| first_indexed | 2024-03-12T23:10:31Z |
| format | Article |
| id | doaj.art-62c2abb2c1d04b0b84012c157fd3beb8 |
| institution | Directory Open Access Journal |
| issn | 1516-1439 |
| language | English |
| last_indexed | 2024-03-12T23:10:31Z |
| publishDate | 2023-07-01 |
| publisher | Associação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol) |
| record_format | Article |
| series | Materials Research |
| spelling | doaj.art-62c2abb2c1d04b0b84012c157fd3beb82023-07-18T07:41:42ZengAssociação Brasileira de Metalurgia e Materiais (ABM); Associação Brasileira de Cerâmica (ABC); Associação Brasileira de Polímeros (ABPol)Materials Research1516-14392023-07-012610.1590/1980-5373-mr-2023-0005Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive SputteringR. S. de OliveiraH. A. FolliI. M. HortaB. S. DamascenoJ. H. C. AugstroseW. MiyakawaA. L. J. PereiraM. Massihttps://orcid.org/0000-0002-7117-8039A. S. da Silva Sobrinhohttps://orcid.org/0000-0001-7227-9176D. M. G. Leitehttps://orcid.org/0000-0002-1792-6171This work reports on the properties of GaN films grown by reactive magnetron sputtering onto glass substrate kept at relatively low temperature (400°C), using different RF power applied to the Ga target. Their structural, morphological, vibrational and optical properties were characterized by X-ray diffraction, atomic force and scanning electron microscopies, Raman spectroscopy and UV-vis spectrophotometry. The films have wurtzite phase with strong preferential orientation in the c-axis direction. Moreover, two clear contributions to the (0002) diffraction peak could be found, indicating the presence of two different morphologies, which were discussed in terms of the formation of an intermediate layer between the substrate and a dominating columnar-like microstructured film.http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392023000100282&tlng=enGaNreactive sputteringbuffer layerglass substrate |
| spellingShingle | R. S. de Oliveira H. A. Folli I. M. Horta B. S. Damasceno J. H. C. Augstrose W. Miyakawa A. L. J. Pereira M. Massi A. S. da Silva Sobrinho D. M. G. Leite Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering Materials Research GaN reactive sputtering buffer layer glass substrate |
| title | Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering |
| title_full | Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering |
| title_fullStr | Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering |
| title_full_unstemmed | Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering |
| title_short | Identification of Self-Buffer Layer on GaN/glass Films Grown by Reactive Sputtering |
| title_sort | identification of self buffer layer on gan glass films grown by reactive sputtering |
| topic | GaN reactive sputtering buffer layer glass substrate |
| url | http://www.scielo.br/scielo.php?script=sci_arttext&pid=S1516-14392023000100282&tlng=en |
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