Integration of Micro Resistance Thermometer Detectors in AlGaN/GaN Devices
Temperature measurements in AlGaN/GaN high electron mobility transistors are required for proper device design, modeling and achieving appropriate reliability. These measurements usually require sophisticated equipment and extensive calibration. This study evaluates the feasibility of temperature me...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2014-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Online Access: | https://ieeexplore.ieee.org/document/6874488/ |