Performance Improvement of Amorphous Ga<sub>2</sub>O<sub>3</sub>/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment

Performance Improvement of Amorphous Ga<sub>2</sub>O<sub>3</sub>/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment

Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) is an attractive semiconductor that is very suitable for deep ultraviolet (DUV) inspection. However, due to the existence of many types of oxygen vacancies in the amorphous Ga<sub>2</sub>O<sub>3</sub> (a-Ga&l...

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Bibliographic Details
Main Authors: Jin Cao, Liang Chen, Xin Chen, Yu Zhu, Jianqi Dong, Baoyu Wang, Miao He, Xingfu Wang
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Crystals
Subjects:
oxygen vacancies
a-Ga<sub>2</sub>O<sub>3</sub>/p-Si heterojunction
deep ultraviolet photodetector
oxygen plasma
Online Access:https://www.mdpi.com/2073-4352/11/10/1248

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https://www.mdpi.com/2073-4352/11/10/1248

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