Effect of annealing temperature on properties of SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> optical films prepared by PECVD method

Effect of annealing temperature on properties of SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> optical films prepared by PECVD method

Based on the basic principle and algorithm of multi-layer optical thin films, SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> double-layer antireflection films for three-junction reverse GaAs solar cells were prepared on GaAs substrate by plasma enhanced chemical vapo...

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Bibliographic Details
Main Authors: WU Li-yu, LI Xiao-qiang, WANG Bin, QU Sheng-guan
Format: Article
Language:zho
Published: Journal of Materials Engineering 2020-12-01
Series:Cailiao gongcheng
Subjects:
antireflection film
gaas-based solar cell
plasma enhanced chemical vapor deposition
annealing
Online Access:http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2019.000894

Internet

http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2019.000894

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