Effect of annealing temperature on properties of SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> optical films prepared by PECVD method
Based on the basic principle and algorithm of multi-layer optical thin films, SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> double-layer antireflection films for three-junction reverse GaAs solar cells were prepared on GaAs substrate by plasma enhanced chemical vapo...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Journal of Materials Engineering
2020-12-01
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| Series: | Cailiao gongcheng |
| Subjects: | |
| Online Access: | http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2019.000894 |
| Summary: | Based on the basic principle and algorithm of multi-layer optical thin films, SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> double-layer antireflection films for three-junction reverse GaAs solar cells were prepared on GaAs substrate by plasma enhanced chemical vapor deposition (PECVD). The relationships between post-annealing and the morphology, structure and optical properties of the multilayer films were characterized by atomic force microscope (AFM), Fourier transform infrared spectrometer (FT-IR), elliptical polarizer, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The results indicate that the films are crystalline state both before and after annealing. With the increase of annealing temperature, the roughness and average reflectance gradually decrease. SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> films annealed at 700 ℃ have the best performance with the lowest average reflectance of 12.65% and roughness of 1.64 nm. The spectral curve of the films move towards to short-wave direction about 30 nm, showing a typical "blue-shift" phenomenon, which indicates that the optical thickness of the films demonstrates a declining trend with the rising of annealing temperature. |
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| ISSN: | 1001-4381 1001-4381 |