Effect of annealing temperature on properties of SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> optical films prepared by PECVD method
Based on the basic principle and algorithm of multi-layer optical thin films, SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> double-layer antireflection films for three-junction reverse GaAs solar cells were prepared on GaAs substrate by plasma enhanced chemical vapo...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
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Journal of Materials Engineering
2020-12-01
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| Series: | Cailiao gongcheng |
| Subjects: | |
| Online Access: | http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2019.000894 |
| _version_ | 1828078624942587904 |
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| author | WU Li-yu LI Xiao-qiang WANG Bin QU Sheng-guan |
| author_facet | WU Li-yu LI Xiao-qiang WANG Bin QU Sheng-guan |
| author_sort | WU Li-yu |
| collection | DOAJ |
| description | Based on the basic principle and algorithm of multi-layer optical thin films, SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> double-layer antireflection films for three-junction reverse GaAs solar cells were prepared on GaAs substrate by plasma enhanced chemical vapor deposition (PECVD). The relationships between post-annealing and the morphology, structure and optical properties of the multilayer films were characterized by atomic force microscope (AFM), Fourier transform infrared spectrometer (FT-IR), elliptical polarizer, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The results indicate that the films are crystalline state both before and after annealing. With the increase of annealing temperature, the roughness and average reflectance gradually decrease. SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> films annealed at 700 ℃ have the best performance with the lowest average reflectance of 12.65% and roughness of 1.64 nm. The spectral curve of the films move towards to short-wave direction about 30 nm, showing a typical "blue-shift" phenomenon, which indicates that the optical thickness of the films demonstrates a declining trend with the rising of annealing temperature. |
| first_indexed | 2024-04-11T02:49:43Z |
| format | Article |
| id | doaj.art-62e23839e1f14dda9ab9a9f326875017 |
| institution | Directory Open Access Journal |
| issn | 1001-4381 1001-4381 |
| language | zho |
| last_indexed | 2024-04-11T02:49:43Z |
| publishDate | 2020-12-01 |
| publisher | Journal of Materials Engineering |
| record_format | Article |
| series | Cailiao gongcheng |
| spelling | doaj.art-62e23839e1f14dda9ab9a9f3268750172023-01-02T16:33:56ZzhoJournal of Materials EngineeringCailiao gongcheng1001-43811001-43812020-12-014812758110.11868/j.issn.1001-4381.2019.00089420201209Effect of annealing temperature on properties of SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> optical films prepared by PECVD methodWU Li-yu0LI Xiao-qiang1WANG Bin2QU Sheng-guan3National Engineering Research Center of Near-Net-Shape Forming for Metallic Materials, South China University of Technology, Guangzhou 510640, ChinaNational Engineering Research Center of Near-Net-Shape Forming for Metallic Materials, South China University of Technology, Guangzhou 510640, ChinaNational Engineering Research Center of Near-Net-Shape Forming for Metallic Materials, South China University of Technology, Guangzhou 510640, ChinaNational Engineering Research Center of Near-Net-Shape Forming for Metallic Materials, South China University of Technology, Guangzhou 510640, ChinaBased on the basic principle and algorithm of multi-layer optical thin films, SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> double-layer antireflection films for three-junction reverse GaAs solar cells were prepared on GaAs substrate by plasma enhanced chemical vapor deposition (PECVD). The relationships between post-annealing and the morphology, structure and optical properties of the multilayer films were characterized by atomic force microscope (AFM), Fourier transform infrared spectrometer (FT-IR), elliptical polarizer, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The results indicate that the films are crystalline state both before and after annealing. With the increase of annealing temperature, the roughness and average reflectance gradually decrease. SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> films annealed at 700 ℃ have the best performance with the lowest average reflectance of 12.65% and roughness of 1.64 nm. The spectral curve of the films move towards to short-wave direction about 30 nm, showing a typical "blue-shift" phenomenon, which indicates that the optical thickness of the films demonstrates a declining trend with the rising of annealing temperature.http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2019.000894antireflection filmgaas-based solar cellplasma enhanced chemical vapor depositionannealing |
| spellingShingle | WU Li-yu LI Xiao-qiang WANG Bin QU Sheng-guan Effect of annealing temperature on properties of SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> optical films prepared by PECVD method Cailiao gongcheng antireflection film gaas-based solar cell plasma enhanced chemical vapor deposition annealing |
| title | Effect of annealing temperature on properties of SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> optical films prepared by PECVD method |
| title_full | Effect of annealing temperature on properties of SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> optical films prepared by PECVD method |
| title_fullStr | Effect of annealing temperature on properties of SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> optical films prepared by PECVD method |
| title_full_unstemmed | Effect of annealing temperature on properties of SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> optical films prepared by PECVD method |
| title_short | Effect of annealing temperature on properties of SiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> optical films prepared by PECVD method |
| title_sort | effect of annealing temperature on properties of sio sub 2 sub si sub 3 sub n sub 4 sub optical films prepared by pecvd method |
| topic | antireflection film gaas-based solar cell plasma enhanced chemical vapor deposition annealing |
| url | http://jme.biam.ac.cn/CN/10.11868/j.issn.1001-4381.2019.000894 |
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