Study of Dopant Activation in Silicon Employing Differential Hall Effect Metrology (DHEM)
Differential Hall Effect Metrology (DHEM) technique was used to characterize highly n-type doped Si epi layers deposited on p-type Si wafers. Total dopant concentration, doping depth profile and post deposition annealing condition were changed for various sample sets and influence of such changes on...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2022-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9698843/ |