Low-temperature electron mobility in doped semiconductors with high dielectric constant
We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of vector character of deformations caused in the crystalline lattice by any point defects siting asymmetrically in the unit cell. In...
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| Format: | Article |
| Language: | English |
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SciPost
2023-03-01
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| Series: | SciPost Physics |
| Online Access: | https://scipost.org/SciPostPhys.14.3.046 |