Perspective: Oxide molecular-beam epitaxy rocks!
Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2015-06-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.4919763 |
| _version_ | 1811294257985617920 |
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| author | Darrell G. Schlom |
| author_facet | Darrell G. Schlom |
| author_sort | Darrell G. Schlom |
| collection | DOAJ |
| description | Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems. |
| first_indexed | 2024-04-13T05:14:36Z |
| format | Article |
| id | doaj.art-631bedd6b2324c13a3ef7fe4c0b5a935 |
| institution | Directory Open Access Journal |
| issn | 2166-532X |
| language | English |
| last_indexed | 2024-04-13T05:14:36Z |
| publishDate | 2015-06-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj.art-631bedd6b2324c13a3ef7fe4c0b5a9352022-12-22T03:00:56ZengAIP Publishing LLCAPL Materials2166-532X2015-06-0136062403062403-510.1063/1.4919763013592APMPerspective: Oxide molecular-beam epitaxy rocks!Darrell G. Schlom0Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA and Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USAMolecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.http://dx.doi.org/10.1063/1.4919763 |
| spellingShingle | Darrell G. Schlom Perspective: Oxide molecular-beam epitaxy rocks! APL Materials |
| title | Perspective: Oxide molecular-beam epitaxy rocks! |
| title_full | Perspective: Oxide molecular-beam epitaxy rocks! |
| title_fullStr | Perspective: Oxide molecular-beam epitaxy rocks! |
| title_full_unstemmed | Perspective: Oxide molecular-beam epitaxy rocks! |
| title_short | Perspective: Oxide molecular-beam epitaxy rocks! |
| title_sort | perspective oxide molecular beam epitaxy rocks |
| url | http://dx.doi.org/10.1063/1.4919763 |
| work_keys_str_mv | AT darrellgschlom perspectiveoxidemolecularbeamepitaxyrocks |