Mechanism of the Wake-Up and the Split-Up in AlO<i><sub>x</sub></i>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<i><sub>x</sub></i> Film

Mechanism of the Wake-Up and the Split-Up in AlO<i><sub>x</sub></i>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<i><sub>x</sub></i> Film

Dielectric layers are widely used in ferroelectric applications such as memory and negative capacitance devices. The wake-up and the split-up phenomena in the ferroelectric hafnia are well-known challenges in early-stage device reliability. We found that the phenomena even occur in the bilayer, whic...

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Bibliographic Details
Main Authors: Min-Jin Kim, Cheol-Jun Kim, Bo-Soo Kang
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Series:Nanomaterials
Subjects:
ferroelectric
hafnium oxide
first order reversal curves
energy landscape
switching mechanism
split up
Online Access:https://www.mdpi.com/2079-4991/13/14/2146

Internet

https://www.mdpi.com/2079-4991/13/14/2146

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