Mechanism of the Wake-Up and the Split-Up in AlO<i><sub>x</sub></i>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<i><sub>x</sub></i> Film
Dielectric layers are widely used in ferroelectric applications such as memory and negative capacitance devices. The wake-up and the split-up phenomena in the ferroelectric hafnia are well-known challenges in early-stage device reliability. We found that the phenomena even occur in the bilayer, whic...
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MDPI AG
2023-07-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/13/14/2146 |
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| author | Min-Jin Kim Cheol-Jun Kim Bo-Soo Kang |
| author_facet | Min-Jin Kim Cheol-Jun Kim Bo-Soo Kang |
| author_sort | Min-Jin Kim |
| collection | DOAJ |
| description | Dielectric layers are widely used in ferroelectric applications such as memory and negative capacitance devices. The wake-up and the split-up phenomena in the ferroelectric hafnia are well-known challenges in early-stage device reliability. We found that the phenomena even occur in the bilayer, which is composed of the hafnia and the dielectrics. The phenomena are known to be affected mainly by oxygen vacancies of hafnia. Dielectric layers, which are often metal oxides, are also prone to be affected by oxygen vacancies. To study the effect of the dielectric layer on the wake-up and the split-up phenomena, we fabricated ferroelectric thin-film capacitors with dielectric layers of various thicknesses and measured their field-cycling behaviors. We found that the movement of oxygen vacancies in the dielectric layer was predominantly affected by the polarization state of the ferroelectric layer. In addition, the mechanism of the field-cycling behavior in the bilayer is similar to that in ferroelectric thin films. Our results can be applied in ferroelectric applications that use dielectric layers. |
| first_indexed | 2024-03-11T00:45:57Z |
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| id | doaj.art-633edba1008e439987c103627f632c4c |
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| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-11T00:45:57Z |
| publishDate | 2023-07-01 |
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| series | Nanomaterials |
| spelling | doaj.art-633edba1008e439987c103627f632c4c2023-11-18T20:46:42ZengMDPI AGNanomaterials2079-49912023-07-011314214610.3390/nano13142146Mechanism of the Wake-Up and the Split-Up in AlO<i><sub>x</sub></i>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<i><sub>x</sub></i> FilmMin-Jin Kim0Cheol-Jun Kim1Bo-Soo Kang2Department of Applied Physics, Hanyang University, Ansan 15588, Republic of KoreaDepartment of Applied Physics, Center for Bionano Intelligence Education and Research, Hanyang University, Ansan 15588, Republic of KoreaDepartment of Applied Physics, Hanyang University, Ansan 15588, Republic of KoreaDielectric layers are widely used in ferroelectric applications such as memory and negative capacitance devices. The wake-up and the split-up phenomena in the ferroelectric hafnia are well-known challenges in early-stage device reliability. We found that the phenomena even occur in the bilayer, which is composed of the hafnia and the dielectrics. The phenomena are known to be affected mainly by oxygen vacancies of hafnia. Dielectric layers, which are often metal oxides, are also prone to be affected by oxygen vacancies. To study the effect of the dielectric layer on the wake-up and the split-up phenomena, we fabricated ferroelectric thin-film capacitors with dielectric layers of various thicknesses and measured their field-cycling behaviors. We found that the movement of oxygen vacancies in the dielectric layer was predominantly affected by the polarization state of the ferroelectric layer. In addition, the mechanism of the field-cycling behavior in the bilayer is similar to that in ferroelectric thin films. Our results can be applied in ferroelectric applications that use dielectric layers.https://www.mdpi.com/2079-4991/13/14/2146ferroelectrichafnium oxidefirst order reversal curvesenergy landscapeswitching mechanismsplit up |
| spellingShingle | Min-Jin Kim Cheol-Jun Kim Bo-Soo Kang Mechanism of the Wake-Up and the Split-Up in AlO<i><sub>x</sub></i>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<i><sub>x</sub></i> Film Nanomaterials ferroelectric hafnium oxide first order reversal curves energy landscape switching mechanism split up |
| title | Mechanism of the Wake-Up and the Split-Up in AlO<i><sub>x</sub></i>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<i><sub>x</sub></i> Film |
| title_full | Mechanism of the Wake-Up and the Split-Up in AlO<i><sub>x</sub></i>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<i><sub>x</sub></i> Film |
| title_fullStr | Mechanism of the Wake-Up and the Split-Up in AlO<i><sub>x</sub></i>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<i><sub>x</sub></i> Film |
| title_full_unstemmed | Mechanism of the Wake-Up and the Split-Up in AlO<i><sub>x</sub></i>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<i><sub>x</sub></i> Film |
| title_short | Mechanism of the Wake-Up and the Split-Up in AlO<i><sub>x</sub></i>/Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<i><sub>x</sub></i> Film |
| title_sort | mechanism of the wake up and the split up in alo i sub x sub i hf sub 0 5 sub zr sub 0 5 sub o i sub x sub i film |
| topic | ferroelectric hafnium oxide first order reversal curves energy landscape switching mechanism split up |
| url | https://www.mdpi.com/2079-4991/13/14/2146 |
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