Study of silicon strain gauges under electron irradiation

Study of silicon strain gauges under electron irradiation

The characteristics of semiconductor strain gauges based on boron doped р-type silicon whiskers under high energy electron irradiation were studied. Strain gauges were irradiated at room temperature by electrons with energies 4,2—14 MeV and different doses 5·1016—1·1018 el/cm2. The main parameters o...

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Bibliographic Details
Main Authors: Liakh-Kaguj N. S., Masluk V. T., Kutrakov A. P., Maryamova I. I., Druzhinin A. A., Mehela I. G.
Format: Article
Language:English
Published: Politehperiodika 2010-02-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
silicon strain gauge
electron irradiation
Online Access:http://www.tkea.com.ua/tkea/2010/1_2010/pdf/07.zip

Internet

http://www.tkea.com.ua/tkea/2010/1_2010/pdf/07.zip

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