Study of silicon strain gauges under electron irradiation
The characteristics of semiconductor strain gauges based on boron doped р-type silicon whiskers under high energy electron irradiation were studied. Strain gauges were irradiated at room temperature by electrons with energies 4,2—14 MeV and different doses 5·1016—1·1018 el/cm2. The main parameters o...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Politehperiodika
2010-02-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2010/1_2010/pdf/07.zip |
| _version_ | 1818050943455854592 |
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| author | Liakh-Kaguj N. S. Masluk V. T. Kutrakov A. P. Maryamova I. I. Druzhinin A. A. Mehela I. G. |
| author_facet | Liakh-Kaguj N. S. Masluk V. T. Kutrakov A. P. Maryamova I. I. Druzhinin A. A. Mehela I. G. |
| author_sort | Liakh-Kaguj N. S. |
| collection | DOAJ |
| description | The characteristics of semiconductor strain gauges based on boron doped р-type silicon whiskers under high energy electron irradiation were studied. Strain gauges were irradiated at room temperature by electrons with energies 4,2—14 MeV and different doses 5·1016—1·1018 el/cm2. The main parameters of irradiated strain gauges: resistance, its temperature dependence and resistance change vs strain at –196…+100°C and –269…+20°C temperature ranges were measured. There are determined the values of electron irradiation energy and dose at which the radiation stability of strain gauges could be ensured. |
| first_indexed | 2024-12-10T11:01:30Z |
| format | Article |
| id | doaj.art-634d631138fd4e35aa66b927b4e8b715 |
| institution | Directory Open Access Journal |
| issn | 2225-5818 |
| language | English |
| last_indexed | 2024-12-10T11:01:30Z |
| publishDate | 2010-02-01 |
| publisher | Politehperiodika |
| record_format | Article |
| series | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| spelling | doaj.art-634d631138fd4e35aa66b927b4e8b7152022-12-22T01:51:41ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182010-02-0112629Study of silicon strain gauges under electron irradiationLiakh-Kaguj N. S.Masluk V. T.Kutrakov A. P.Maryamova I. I.Druzhinin A. A.Mehela I. G.The characteristics of semiconductor strain gauges based on boron doped р-type silicon whiskers under high energy electron irradiation were studied. Strain gauges were irradiated at room temperature by electrons with energies 4,2—14 MeV and different doses 5·1016—1·1018 el/cm2. The main parameters of irradiated strain gauges: resistance, its temperature dependence and resistance change vs strain at –196…+100°C and –269…+20°C temperature ranges were measured. There are determined the values of electron irradiation energy and dose at which the radiation stability of strain gauges could be ensured.http://www.tkea.com.ua/tkea/2010/1_2010/pdf/07.zipsilicon strain gaugeelectron irradiation |
| spellingShingle | Liakh-Kaguj N. S. Masluk V. T. Kutrakov A. P. Maryamova I. I. Druzhinin A. A. Mehela I. G. Study of silicon strain gauges under electron irradiation Tekhnologiya i Konstruirovanie v Elektronnoi Apparature silicon strain gauge electron irradiation |
| title | Study of silicon strain gauges under electron irradiation |
| title_full | Study of silicon strain gauges under electron irradiation |
| title_fullStr | Study of silicon strain gauges under electron irradiation |
| title_full_unstemmed | Study of silicon strain gauges under electron irradiation |
| title_short | Study of silicon strain gauges under electron irradiation |
| title_sort | study of silicon strain gauges under electron irradiation |
| topic | silicon strain gauge electron irradiation |
| url | http://www.tkea.com.ua/tkea/2010/1_2010/pdf/07.zip |
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