Frequency-Dependent Characteristics and Parametric Modeling of the Silicon Substrate in TSV-Based 3-D ICs

Frequency-Dependent Characteristics and Parametric Modeling of the Silicon Substrate in TSV-Based 3-D ICs

This paper presents an in- depth investigation of the silicon substrate characteristics based on frequency-dependent parameters in the through-silicon via (TSV)-based 3-D ICs. It is the first time to define the frequency bands accurately on the ground of a quantitative standard of calibration to rep...

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Bibliographic Details
Main Authors: Yingbo Zhao, Qingyang Fan
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Access
Subjects:
Silicon substrate
frequency-dependent parameters
through-silicon via
frequency bands
parametric modeling
3-D ICs
Online Access:https://ieeexplore.ieee.org/document/9997491/

Internet

https://ieeexplore.ieee.org/document/9997491/

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