Moisture effect on the diffusion of Cu ions in Cu/Ta2O5/Pt and Cu/SiO2/Pt resistance switches: a first-principles study
Cu/Ta2O5/Pt and Cu/SiO2/Pt are two of the most promising resistance switches. From experimental observations, it is speculated that the presence of H2O in the amorphous Ta2O5 and SiO2 (a-Ta2O5 and a-SiO2) facilitates the rate-limiting step during the switching process. This rate-limiting step is ess...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2019-12-01
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| Series: | Science and Technology of Advanced Materials |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/14686996.2019.1616222 |