Impact of Temperature on Neutron Irradiation Failure-in-Time of Silicon and Silicon Carbide Power MOSFETs

Impact of Temperature on Neutron Irradiation Failure-in-Time of Silicon and Silicon Carbide Power MOSFETs

Accelerated neutron tests on silicon (Si) and silicon carbide (SiC) power MOSFETs at different temperatures and drain bias voltages were performed at the ChipIr facility (Didcot, UK). A super-junction silicon MOSFET and planar SiC MOSFETs with different technologies made by STMicroelectronics were u...

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Bibliographic Details
Main Authors: Fabio Principato, Carlo Cazzaniga, Maria Kastriotou, Christopher Frost, Leonardo Abbene, Francesco Pintacuda
Format: Article
Language:English
Published: MDPI AG 2023-05-01
Series:Radiation
Subjects:
neutron irradiation
power MOSFET
silicon carbide
failure-in-time
temperature measurement
single-event burnout
Online Access:https://www.mdpi.com/2673-592X/3/2/10

Internet

https://www.mdpi.com/2673-592X/3/2/10

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