The role of coherent epitaxy in forming a two-dimensional electron gas at LaIn1-xGaxO3/BaSnO3 interfaces
A 2D electron gas is known to form at the interface of some oxides. Here, 2D electron density is studied in the LaIn1-xGaxO3/Ba0.997La0.003SnO3 interface, revealing that increased alloying causes the migration of dislocations to the interface, destroying coherency and preventing 2D electron gas form...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2021-07-01
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| Series: | Communications Materials |
| Online Access: | https://doi.org/10.1038/s43246-021-00179-2 |