Optimization of an Operation Mode of the Solid-State Image Sensor in a Short-Wave Infrared Region
Increase in quantum efficiency of silicon image sensor in the short-wave infrared range 900…1100 nm is shown theoretically and confirmed experimentally in case of temperature increase of a crystal. This increase is caused by reduction of width of the forbidden band of silicon in case of temperature...
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| Format: | Article |
| Language: | Russian |
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Saint Petersburg Electrotechnical University "LETI"
2017-06-01
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| Series: | Известия высших учебных заведений России: Радиоэлектроника |
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| Online Access: | https://re.eltech.ru/jour/article/view/176 |