Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer
A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (Vt) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V Vt shift, the me...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4832237 |