Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Alumina

Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Alumina

Abstract Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on scalable processes for interface manipulation of structured surfaces on the atomic level. While ALD allows the synthesis of conformal films with utmost control o...

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Bibliographic Details
Main Authors: Alex Henning, Johannes D. Bartl, Lukas Wolz, Maximilian Christis, Felix Rauh, Michele Bissolo, Theresa Grünleitner, Johanna Eichhorn, Patrick Zeller, Matteo Amati, Luca Gregoratti, Jonathan J. Finley, Bernhard Rieger, Martin Stutzmann, Ian D. Sharp
Format: Article
Language:English
Published: Wiley-VCH 2023-02-01
Series:Advanced Materials Interfaces
Subjects:
aluminum oxide
atomic layer deposition
field‐effect passivation
hydrogen plasma
silicon surface charge density
Online Access:https://doi.org/10.1002/admi.202202166

Internet

https://doi.org/10.1002/admi.202202166

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