Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric
High k dielectrics, such as Al2O3, has attracted increasing research attention for its use as the gate dielectric of 4H-SiC MOS capacitors. Since the dielectric constant of Al2O3 is not high enough, many other high-k dielectrics are actively explored. In this letter, a report of the interface proper...
Main Authors: | , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2018-12-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5051615 |