Characteristics of the formation and composition of AlxGa1-xN/AlN/por-Si/Si(111) heterostructures grown using a porous silicon buffer layer
In this work, we studied the efficiency of introducing nanoporous silicon as a buffer layer in the growth of AlxGa1–xN/AlN/Si(111) on a single-crystal silicon by molecular beam growth technology. We also considered its influence on the morphological characteristics and atomic composition of the sur...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Voronezh State University
2022-03-01
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| Series: | Конденсированные среды и межфазные границы |
| Subjects: | |
| Online Access: | https://journals.vsu.ru/kcmf/article/view/9055 |