Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

Process Steps for High Quality Si-Based Epitaxial Growth at Low Temperature via RPCVD

The key process steps for growing high-quality Si-based epitaxial films via reduced pressure chemical vapor deposition (RPCVD) are investigated herein. The quality of the epitaxial films is largely affected by the following steps in the epitaxy process: ex-situ cleaning, in-situ bake, and loading co...

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Bibliographic Details
Main Authors: Jongwan Jung, Baegmo Son, Byungmin Kam, Yong Sang Joh, Woonyoung Jeong, Seongjae Cho, Won-Jun Lee, Sangjoon Park
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Materials
Subjects:
epitaxy
RPCVD
low temperature
Si
SiGe
impurity
Online Access:https://www.mdpi.com/1996-1944/14/13/3733

Internet

https://www.mdpi.com/1996-1944/14/13/3733

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