Broadband dielectric response of AlN ceramic composites
Aluminium nitride (AlN) is considered as a substrate material for microelectronic applications. AlN ceramic composites with different amount of TiO2 (up to 4 vol.%) were obtained using hot pressing at different sintering temperature from 1700 to 1900 °C. It was shown that milling of the raw AlN powder...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
University of Novi Sad
2014-03-01
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Series: | Processing and Application of Ceramics |
Subjects: | |
Online Access: | http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2023%2007.pdf |