Near-infrared light emission from aluminum-doped tantalum-oxide thin films prepared using a simple co-sputtering method

We fabricated aluminum-doped tantalum-oxide (Ta2O5:Al) thin films using a simple co-sputtering method and observed broad near-infrared (NIR) light emission with wavelengths around 700 to 1000 nm from a sample annealed at 900 °C without rare-earth elements. The NIR light emission is thought to be due...

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Bibliographic Details
Main Authors: Kenta Miura, Kosuke Omi
Format: Article
Language:English
Published: Elsevier 2024-02-01
Series:Results in Physics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379724000718