Near-infrared light emission from aluminum-doped tantalum-oxide thin films prepared using a simple co-sputtering method
We fabricated aluminum-doped tantalum-oxide (Ta2O5:Al) thin films using a simple co-sputtering method and observed broad near-infrared (NIR) light emission with wavelengths around 700 to 1000 nm from a sample annealed at 900 °C without rare-earth elements. The NIR light emission is thought to be due...
Main Authors: | Kenta Miura, Kosuke Omi |
---|---|
Format: | Article |
Language: | English |
Published: |
Elsevier
2024-02-01
|
Series: | Results in Physics |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379724000718 |
Similar Items
-
Fabrication of Tm-doped Ta2O5 thin films using a co-sputtering method
by: K. Miura, et al.
Published: (2014-01-01) -
Properties of tantalum sputtered films /
by: 8426 Gerstenberg, D., et al. -
Highly Durable Antimicrobial Tantalum Nitride/Copper Coatings on Stainless Steel Deposited by Pulsed Magnetron Sputtering
by: Thangavel Elangovan, et al.
Published: (2022-08-01) -
Antibacterial activity of NiTi alloy with sputtered tantalum
by: Seenaa Alsaaidi, et al.
Published: (2023-12-01) -
Fabrication and evaluation of Ta2O5:Y2O3 co-sputtered thin films
by: K. Miura, et al.
Published: (2014-01-01)