Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition
The results of a detailed investigation of electrically active defects in metal-organic chemical vapor deposition (MOCVD)-grown β-Ga2O3 (010) epitaxial layers are described. A combination of deep level optical spectroscopy (DLOS), deep level transient (thermal) spectroscopy (DLTS), and admittance sp...
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2020-02-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/1.5142313 |