A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter

A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter

This paper highlights the proposed silicon field-effect transistor (Si-FET)-based high switching frequency three-level (TL) LLC resonant converter. It provides a detailed operational analysis of the converter; the multilevel (ML) organization of cells; voltage-balancing principles; current-balancing...

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Bibliographic Details
Main Authors: Jung-Woo Yang, Sang-Kyoo Han
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Energies
Subjects:
three-level LLC resonant converter
1 MHz operation
Si-FET
voltage balancing
current balancing
multilevel
voltage stress
Online Access:https://www.mdpi.com/1996-1073/12/16/3082

Internet

https://www.mdpi.com/1996-1073/12/16/3082

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