A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter
This paper highlights the proposed silicon field-effect transistor (Si-FET)-based high switching frequency three-level (TL) LLC resonant converter. It provides a detailed operational analysis of the converter; the multilevel (ML) organization of cells; voltage-balancing principles; current-balancing...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-08-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/12/16/3082 |
| _version_ | 1811186418557386752 |
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| author | Jung-Woo Yang Sang-Kyoo Han |
| author_facet | Jung-Woo Yang Sang-Kyoo Han |
| author_sort | Jung-Woo Yang |
| collection | DOAJ |
| description | This paper highlights the proposed silicon field-effect transistor (Si-FET)-based high switching frequency three-level (TL) LLC resonant converter. It provides a detailed operational analysis of the converter; the multilevel (ML) organization of cells; voltage-balancing principles; current-balancing principles; loss comparison between Si-FETs and gallium-nitride (GaN)-FETs; and an optimal design consideration based on loss analysis. This analysis reveals that the switching losses of all power switches can be considerably reduced as the voltage across each switch can be set to half of the input voltage without an additional circuit or control strategy. Moreover, the current of each resonant inductor is automatically balanced by a proposed integrated magnetic (IM)-coupled inductor. Therefore, the operating frequency can be easily increased to near 1 MHz without applying high-performance switches. In addition, the resonant tanks of the converter can be a group of cells for multilevel operation, which indicates that the voltage across each switch is further reduced as more cells are added. Based on the results of the analysis, an optimal design consideration according to the resonant tank and switching frequency is discussed. The proposed converter was validated via a prototype converter with an input of 390 V, an output of 19.5 V/18 A, and a frequency of 1 MHz. |
| first_indexed | 2024-04-11T13:46:09Z |
| format | Article |
| id | doaj.art-64acfa14b3e94d798d37990449429af0 |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-04-11T13:46:09Z |
| publishDate | 2019-08-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-64acfa14b3e94d798d37990449429af02022-12-22T04:21:05ZengMDPI AGEnergies1996-10732019-08-011216308210.3390/en12163082en12163082A Si-FET-Based High Switching Frequency Three-Level LLC Resonant ConverterJung-Woo Yang0Sang-Kyoo Han1POELSA, Power Electronics System Laboratory, Kookmin University, Seoul 100-011, KoreaPOELSA, Power Electronics System Laboratory, Kookmin University, Seoul 100-011, KoreaThis paper highlights the proposed silicon field-effect transistor (Si-FET)-based high switching frequency three-level (TL) LLC resonant converter. It provides a detailed operational analysis of the converter; the multilevel (ML) organization of cells; voltage-balancing principles; current-balancing principles; loss comparison between Si-FETs and gallium-nitride (GaN)-FETs; and an optimal design consideration based on loss analysis. This analysis reveals that the switching losses of all power switches can be considerably reduced as the voltage across each switch can be set to half of the input voltage without an additional circuit or control strategy. Moreover, the current of each resonant inductor is automatically balanced by a proposed integrated magnetic (IM)-coupled inductor. Therefore, the operating frequency can be easily increased to near 1 MHz without applying high-performance switches. In addition, the resonant tanks of the converter can be a group of cells for multilevel operation, which indicates that the voltage across each switch is further reduced as more cells are added. Based on the results of the analysis, an optimal design consideration according to the resonant tank and switching frequency is discussed. The proposed converter was validated via a prototype converter with an input of 390 V, an output of 19.5 V/18 A, and a frequency of 1 MHz.https://www.mdpi.com/1996-1073/12/16/3082three-level LLC resonant converter1 MHz operationSi-FETvoltage balancingcurrent balancingmultilevelvoltage stress |
| spellingShingle | Jung-Woo Yang Sang-Kyoo Han A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter Energies three-level LLC resonant converter 1 MHz operation Si-FET voltage balancing current balancing multilevel voltage stress |
| title | A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter |
| title_full | A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter |
| title_fullStr | A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter |
| title_full_unstemmed | A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter |
| title_short | A Si-FET-Based High Switching Frequency Three-Level LLC Resonant Converter |
| title_sort | si fet based high switching frequency three level llc resonant converter |
| topic | three-level LLC resonant converter 1 MHz operation Si-FET voltage balancing current balancing multilevel voltage stress |
| url | https://www.mdpi.com/1996-1073/12/16/3082 |
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