Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning

Electrolyte‐Gated Transistor Array (20 × 20) with Low‐Programming Interference Based on Coplanar Gate Structure for Unsupervised Learning

Compute‐in‐memory (CIM) is a pioneering approach using parallel data processing to eliminate traditional data transmission bottlenecks for faster, energy‐efficient data handling. Crossbar arrays with two‐terminal devices such as memristors and phase‐change memory are commonly employed in CIM, but th...

Full description

Bibliographic Details
Main Authors: Wenkui Zhang, Jun Li, Mengjiao Li, Yi Li, Hong Lian, Wenqing Gao, Benxiao Sun, Fei Wang, Lian Cheng, Hanqi Yu, Lianghao Chen, Jianhua Zhang
Format: Article
Language:English
Published: Wiley-VCH 2024-04-01
Series:Small Science
Subjects:
arrays
electrolyte‐gated transistors
low energy consumption
unsupervised learning
winner‐takes‐all neural network
Online Access:https://doi.org/10.1002/smsc.202300306

Internet

https://doi.org/10.1002/smsc.202300306

Similar Items