Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers
We derive a statistical physics model of two-dimensional electron gas (2DEG) and propose an accurate approximation method for calculating the quantum-mechanical effects of metal-oxide-semiconductor (MOS) structure in accumulation and strong inversion regions. We use an exponential surface potential...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4826886 |