Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers
We derive a statistical physics model of two-dimensional electron gas (2DEG) and propose an accurate approximation method for calculating the quantum-mechanical effects of metal-oxide-semiconductor (MOS) structure in accumulation and strong inversion regions. We use an exponential surface potential...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2013-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4826886 |
| _version_ | 1828451812604116992 |
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| author | Chien-Wei Lee Jenn-Gwo Hwu |
| author_facet | Chien-Wei Lee Jenn-Gwo Hwu |
| author_sort | Chien-Wei Lee |
| collection | DOAJ |
| description | We derive a statistical physics model of two-dimensional electron gas (2DEG) and propose an accurate approximation method for calculating the quantum-mechanical effects of metal-oxide-semiconductor (MOS) structure in accumulation and strong inversion regions. We use an exponential surface potential approximation in solving the quantization energy levels and derive the function of density of states in 2D to 3D transition region by applying uncertainty principle and Schrödinger equation in k-space. The simulation results show that our approximation method and theory of density of states solve the two major problems of previous researches: the non-negligible error caused by the linear potential approximation and the inconsistency of density of states and carrier distribution in 2D to 3D transition region. |
| first_indexed | 2024-12-10T23:43:13Z |
| format | Article |
| id | doaj.art-6511df3e5d8d4ae59ebfbbe3531b328e |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-10T23:43:13Z |
| publishDate | 2013-10-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-6511df3e5d8d4ae59ebfbbe3531b328e2022-12-22T01:28:59ZengAIP Publishing LLCAIP Advances2158-32262013-10-01310102123102123-1810.1063/1.4826886026310ADVQuantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layersChien-Wei Lee0Jenn-Gwo Hwu1Graduate Institute of Electronics Engineering/ Department of Electrical Engineering, National Taiwan University, Taipei, 10617, TaiwanGraduate Institute of Electronics Engineering/ Department of Electrical Engineering, National Taiwan University, Taipei, 10617, TaiwanWe derive a statistical physics model of two-dimensional electron gas (2DEG) and propose an accurate approximation method for calculating the quantum-mechanical effects of metal-oxide-semiconductor (MOS) structure in accumulation and strong inversion regions. We use an exponential surface potential approximation in solving the quantization energy levels and derive the function of density of states in 2D to 3D transition region by applying uncertainty principle and Schrödinger equation in k-space. The simulation results show that our approximation method and theory of density of states solve the two major problems of previous researches: the non-negligible error caused by the linear potential approximation and the inconsistency of density of states and carrier distribution in 2D to 3D transition region.http://dx.doi.org/10.1063/1.4826886 |
| spellingShingle | Chien-Wei Lee Jenn-Gwo Hwu Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers AIP Advances |
| title | Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers |
| title_full | Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers |
| title_fullStr | Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers |
| title_full_unstemmed | Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers |
| title_short | Quantum-mechanical calculation of carrier distribution in MOS accumulation and strong inversion layers |
| title_sort | quantum mechanical calculation of carrier distribution in mos accumulation and strong inversion layers |
| url | http://dx.doi.org/10.1063/1.4826886 |
| work_keys_str_mv | AT chienweilee quantummechanicalcalculationofcarrierdistributioninmosaccumulationandstronginversionlayers AT jenngwohwu quantummechanicalcalculationofcarrierdistributioninmosaccumulationandstronginversionlayers |