Propagation of Crystal Defects during Directional Solidification of Silicon via Induction of Functional Defects

Propagation of Crystal Defects during Directional Solidification of Silicon via Induction of Functional Defects

The introduction of directional solidified cast mono silicon promised a combination of the cheaper production via a casting process with monocrystalline material quality, but has been struggling with high concentration of structural defects. The SMART approach uses functional defects to maintain the...

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Bibliographic Details
Main Authors: Patricia Krenckel, Yusuke Hayama, Florian Schindler, Theresa Trötschler, Stephan Riepe, Noritaka Usami
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Crystals
Subjects:
directional solidification
crystal structure
dislocations
grain boundaries
seeded growth
semiconducting silicon
Online Access:https://www.mdpi.com/2073-4352/11/2/90

Internet

https://www.mdpi.com/2073-4352/11/2/90

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