Strain-engineering on mechanical and electronic properties of group IV-V two-dimensional semiconductors
Due to the attractive physical properties, group IV-V materials (A _3 B, A = C, Si, Ge and B = N, P, As) have been received much attention in recent years. In this paper, first-principles calculations have been performed to investigate the elastic and electrical properties in two-dimensional (2D) A...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IOP Publishing
2021-01-01
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Series: | Materials Research Express |
Subjects: | |
Online Access: | https://doi.org/10.1088/2053-1591/ac0366 |