Strain-engineering on mechanical and electronic properties of group IV-V two-dimensional semiconductors

Strain-engineering on mechanical and electronic properties of group IV-V two-dimensional semiconductors

Due to the attractive physical properties, group IV-V materials (A _3 B, A = C, Si, Ge and B = N, P, As) have been received much attention in recent years. In this paper, first-principles calculations have been performed to investigate the elastic and electrical properties in two-dimensional (2D) A...

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Bibliographic Details
Main Authors: Tianyu Wang, Kun Lu, Zhimi Li, Xin Li, Linling Dai, Jiuren Yin, Ping Zhang, Yanhuai Ding
Format: Article
Language:English
Published: IOP Publishing 2021-01-01
Series:Materials Research Express
Subjects:
group IV-V materials
first-principles
electronic properties
strain engineering
mobility
mechanical properties
Online Access:https://doi.org/10.1088/2053-1591/ac0366

Internet

https://doi.org/10.1088/2053-1591/ac0366

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