Charging Phenomena at the Interface Between High-k Dielectrics and SiOx Interlayers
The transition regions of GdSiO/SiOx and HfO2/SiOx interfaces have been studied with the high-k layers deposited on silicon substrates. The existence of transition regions was verified by medium energy ion scattering (MEIS) data and transmission electron microscopy (TEM). From measurements of therm...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Sprog: | English |
| Udgivet: |
National Institute of Telecommunications
2023-06-01
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| Serier: | Journal of Telecommunications and Information Technology |
| Fag: | |
| Online adgang: | https://jtit.pl/jtit/article/view/1115 |