Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor

Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor

Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the neuroplasticity functions of both short-term memory...

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Bibliographic Details
Main Authors: Dongyeon Kang, Wonjung Kim, Jun Tae Jang, Changwook Kim, Jung Nam Kim, Sung-Jin Choi, Jong-Ho Bae, Dong Myong Kim, Yoon Kim, Dae Hwan Kim
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Access
Subjects:
Synapse device
neuromorphic system
IGZO
short-term memory
long-term memory
synaptic transistor
Online Access:https://ieeexplore.ieee.org/document/10054037/

Internet

https://ieeexplore.ieee.org/document/10054037/

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