Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor
Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the neuroplasticity functions of both short-term memory...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10054037/ |
| _version_ | 1811160933587746816 |
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| author | Dongyeon Kang Wonjung Kim Jun Tae Jang Changwook Kim Jung Nam Kim Sung-Jin Choi Jong-Ho Bae Dong Myong Kim Yoon Kim Dae Hwan Kim |
| author_facet | Dongyeon Kang Wonjung Kim Jun Tae Jang Changwook Kim Jung Nam Kim Sung-Jin Choi Jong-Ho Bae Dong Myong Kim Yoon Kim Dae Hwan Kim |
| author_sort | Dongyeon Kang |
| collection | DOAJ |
| description | Short- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the neuroplasticity functions of both short-term memory (STM) and long-term memory (LTM) through the control of the amplitude and the number of input pulses. The STM operated by ion movement in the gate dielectrics occurs when the input amplitude is relatively small (< 9 V). The LTM operated through the storage of electrons in the FG occurs when the input amplitude is relatively large (>10 V). In addition, as the number of input pulses increases, information is stored for a longer time. Our FG IGZO synaptic transistor could be a promising device solution for brain-inspired computing systems. |
| first_indexed | 2024-04-10T06:06:08Z |
| format | Article |
| id | doaj.art-657610b286854e77a74ef877a46306bf |
| institution | Directory Open Access Journal |
| issn | 2169-3536 |
| language | English |
| last_indexed | 2024-04-10T06:06:08Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj.art-657610b286854e77a74ef877a46306bf2023-03-03T00:01:04ZengIEEEIEEE Access2169-35362023-01-0111201962020110.1109/ACCESS.2023.324947910054037Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic TransistorDongyeon Kang0https://orcid.org/0000-0003-2720-5834Wonjung Kim1Jun Tae Jang2https://orcid.org/0000-0003-3891-2112Changwook Kim3https://orcid.org/0000-0001-8992-6923Jung Nam Kim4https://orcid.org/0000-0001-6457-727XSung-Jin Choi5https://orcid.org/0000-0003-1301-2847Jong-Ho Bae6https://orcid.org/0000-0002-1786-7132Dong Myong Kim7https://orcid.org/0000-0002-0858-5854Yoon Kim8https://orcid.org/0000-0002-4837-8411Dae Hwan Kim9https://orcid.org/0000-0003-2567-4012School of Electrical Engineering, Kookmin University, Seoul, South KoreaSchool of Electrical Engineering, Kookmin University, Seoul, South KoreaSchool of Electrical Engineering, Kookmin University, Seoul, South KoreaCircadian ICT Research Center, Kookmin University, Seoul, Republic of KoreaSchool of Electrical and Computer Engineering, University of Seoul, Seoul, South KoreaSchool of Electrical Engineering, Kookmin University, Seoul, South KoreaSchool of Electrical Engineering, Kookmin University, Seoul, South KoreaSchool of Electrical Engineering, Kookmin University, Seoul, South KoreaSchool of Electrical and Computer Engineering, University of Seoul, Seoul, South KoreaSchool of Electrical Engineering, Kookmin University, Seoul, South KoreaShort- and long-term neuroplasticity behaviors are key mechanisms for various activities. In this paper, we propose a synaptic transistor with a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer. The proposed device emulates the neuroplasticity functions of both short-term memory (STM) and long-term memory (LTM) through the control of the amplitude and the number of input pulses. The STM operated by ion movement in the gate dielectrics occurs when the input amplitude is relatively small (< 9 V). The LTM operated through the storage of electrons in the FG occurs when the input amplitude is relatively large (>10 V). In addition, as the number of input pulses increases, information is stored for a longer time. Our FG IGZO synaptic transistor could be a promising device solution for brain-inspired computing systems.https://ieeexplore.ieee.org/document/10054037/Synapse deviceneuromorphic systemIGZOshort-term memorylong-term memorysynaptic transistor |
| spellingShingle | Dongyeon Kang Wonjung Kim Jun Tae Jang Changwook Kim Jung Nam Kim Sung-Jin Choi Jong-Ho Bae Dong Myong Kim Yoon Kim Dae Hwan Kim Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor IEEE Access Synapse device neuromorphic system IGZO short-term memory long-term memory synaptic transistor |
| title | Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor |
| title_full | Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor |
| title_fullStr | Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor |
| title_full_unstemmed | Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor |
| title_short | Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor |
| title_sort | short and long term memory based on a floating gate igzo synaptic transistor |
| topic | Synapse device neuromorphic system IGZO short-term memory long-term memory synaptic transistor |
| url | https://ieeexplore.ieee.org/document/10054037/ |
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