Stoichiometric edges during the intrinsic growth of hexagonal boron nitride on Ir(111)

The growth of hexagonal boron nitride, hBN, on Ir(111) at 1150–1200 K by thermal decomposition of borazine has been monitored in situ by means of low energy electron microscopy, LEEM. A major and unexpected hBN growth induced transformation of the step morphology on Ir(111) is observed. The dominant...

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Bibliographic Details
Main Authors: Bene Poelsema, Harold J W Zandvliet, Arie van Houselt
Format: Article
Language:English
Published: IOP Publishing 2019-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/ab3dda