Bounds to electron spin qubit variability for scalable CMOS architectures

Bounds to electron spin qubit variability for scalable CMOS architectures

Abstract Spins of electrons in silicon MOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performanc...

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Bibliographic Details
Main Authors: Jesús D. Cifuentes, Tuomo Tanttu, Will Gilbert, Jonathan Y. Huang, Ensar Vahapoglu, Ross C. C. Leon, Santiago Serrano, Dennis Otter, Daniel Dunmore, Philip Y. Mai, Frédéric Schlattner, MengKe Feng, Kohei Itoh, Nikolay Abrosimov, Hans-Joachim Pohl, Michael Thewalt, Arne Laucht, Chih Hwan Yang, Christopher C. Escott, Wee Han Lim, Fay E. Hudson, Rajib Rahman, Andrew S. Dzurak, Andre Saraiva
Format: Article
Language:English
Published: Nature Portfolio 2024-05-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-024-48557-x

Internet

https://doi.org/10.1038/s41467-024-48557-x

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