Experimental Investigation of Charge Sharing Induced SET Depending on Transistors in Abutted Rows in 65 nm Bulk CMOS Technology
The effect of transistors in abutted rows on charge sharing is investigated by changing the configuration of the transistors in abutted rows in this work. 3D TCAD numerical simulations indicate that the existence of transistors in abutted rows can mitigate the occurring probability of charge sharing...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9780406/ |