Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors

Rational Doping Strategy to Build the First Solution‐Processed p‐n Homojunction Architecture toward Silicon Quantum Dot Photodetectors

Semiconductor p‐n homojunction is a requisite building block of operating transistors and diodes which make up the modern electronic circuits and optoelectronic applications. However, it has been so far limited to bulk form of single crystals such as silicon (Si) or gallium arsenide. Herein, a brand...

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Bibliographic Details
Main Authors: Batu Ghosh, Hiroyuki Yamada, Kazuhiro Nemoto, Wipakorn Jevasuwan, Naoki Fukata, Hon‐Tao Sun, Naoto Shirahata
Format: Article
Language:English
Published: Wiley-VCH 2024-12-01
Series:Small Science
Subjects:
electric impurity doping
p‐n homojunction
photodiodes
silicon quantum dots
solution‐processed optoelectronics
Online Access:https://doi.org/10.1002/smsc.202400367

Internet

https://doi.org/10.1002/smsc.202400367

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