Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation

Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation

A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (<i>BV</i>) and the specific on-resistance (<i>R</i><sub>on,sp</sub>). The innovative terminal technology of Brea...

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Bibliographic Details
Main Authors: Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li, Yintang Yang
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Micromachines
Subjects:
VDMOS
electric field
breakdown voltage
specific on-resistance
Online Access:https://www.mdpi.com/2072-666X/13/4/573

Internet

https://www.mdpi.com/2072-666X/13/4/573

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