Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation
A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (<i>BV</i>) and the specific on-resistance (<i>R</i><sub>on,sp</sub>). The innovative terminal technology of Brea...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-04-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/4/573 |
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| author | Dongyan Zhao Yubo Wang Yanning Chen Jin Shao Zhen Fu Baoxing Duan Fang Liu Xiuwei Li Tenghao Li Xin Yang Mingzhe Li Yintang Yang |
| author_facet | Dongyan Zhao Yubo Wang Yanning Chen Jin Shao Zhen Fu Baoxing Duan Fang Liu Xiuwei Li Tenghao Li Xin Yang Mingzhe Li Yintang Yang |
| author_sort | Dongyan Zhao |
| collection | DOAJ |
| description | A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (<i>BV</i>) and the specific on-resistance (<i>R</i><sub>on,sp</sub>). The innovative terminal technology of Breakdown Point Transfer (BPT) is applied to S-FLI VDMOS, which transfers the breakdown point from the high electric field region to the low electric field region, and the S-FLI VDMOS structure uses multiple layers of charge compensation blocks to generate multiple electric field peaks in the drift region in order to optimize the electric field distribution. In the TCAD simulation, the <i>BV</i> of the proposed S-FLI VDMOS is improved to 326 V, which is higher than that of 281 V for the conventional Si VDMOS with the same drift region length of 15 μm, and the <i>R</i><sub>on,sp</sub> is reduced from 21.54 mΩ·cm<sup>2</sup> for the conventional Si VDMOS to 7.77 mΩ·cm<sup>2</sup> for the S-FLI VDMOS. Compared with the conventional Si VDMOS, the current density of the effective current conduction path is increased when the forward bias is applied to the proposed device. |
| first_indexed | 2024-03-09T10:31:08Z |
| format | Article |
| id | doaj.art-661852a5504a4fbe9506b61826417a8b |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T10:31:08Z |
| publishDate | 2022-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-661852a5504a4fbe9506b61826417a8b2023-12-01T21:14:38ZengMDPI AGMicromachines2072-666X2022-04-0113457310.3390/mi13040573Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD SimulationDongyan Zhao0Yubo Wang1Yanning Chen2Jin Shao3Zhen Fu4Baoxing Duan5Fang Liu6Xiuwei Li7Tenghao Li8Xin Yang9Mingzhe Li10Yintang Yang11Beijing Engineering Research Center of High-Reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 102299, ChinaBeijing Engineering Research Center of High-Reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 102299, ChinaBeijing Engineering Research Center of High-Reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 102299, ChinaBeijing Engineering Research Center of High-Reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 102299, ChinaBeijing Chip Identification Technology Co., Ltd., Beijing 102299, ChinaKey Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No. 2 South TaiBai Road, Xi’an 710071, ChinaBeijing Chip Identification Technology Co., Ltd., Beijing 102299, ChinaBeijing Engineering Research Center of High-Reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 102299, ChinaBeijing Engineering Research Center of High-Reliability IC with Power Industrial Grade, Beijing Smart-Chip Microelectronics Technology Co., Ltd., Beijing 102299, ChinaKey Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No. 2 South TaiBai Road, Xi’an 710071, ChinaKey Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No. 2 South TaiBai Road, Xi’an 710071, ChinaKey Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, No. 2 South TaiBai Road, Xi’an 710071, ChinaA novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (<i>BV</i>) and the specific on-resistance (<i>R</i><sub>on,sp</sub>). The innovative terminal technology of Breakdown Point Transfer (BPT) is applied to S-FLI VDMOS, which transfers the breakdown point from the high electric field region to the low electric field region, and the S-FLI VDMOS structure uses multiple layers of charge compensation blocks to generate multiple electric field peaks in the drift region in order to optimize the electric field distribution. In the TCAD simulation, the <i>BV</i> of the proposed S-FLI VDMOS is improved to 326 V, which is higher than that of 281 V for the conventional Si VDMOS with the same drift region length of 15 μm, and the <i>R</i><sub>on,sp</sub> is reduced from 21.54 mΩ·cm<sup>2</sup> for the conventional Si VDMOS to 7.77 mΩ·cm<sup>2</sup> for the S-FLI VDMOS. Compared with the conventional Si VDMOS, the current density of the effective current conduction path is increased when the forward bias is applied to the proposed device.https://www.mdpi.com/2072-666X/13/4/573VDMOSelectric fieldbreakdown voltagespecific on-resistance |
| spellingShingle | Dongyan Zhao Yubo Wang Yanning Chen Jin Shao Zhen Fu Baoxing Duan Fang Liu Xiuwei Li Tenghao Li Xin Yang Mingzhe Li Yintang Yang Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation Micromachines VDMOS electric field breakdown voltage specific on-resistance |
| title | Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation |
| title_full | Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation |
| title_fullStr | Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation |
| title_full_unstemmed | Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation |
| title_short | Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation |
| title_sort | novel step floating islands vdmos with low specific on resistance by tcad simulation |
| topic | VDMOS electric field breakdown voltage specific on-resistance |
| url | https://www.mdpi.com/2072-666X/13/4/573 |
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