Ti/HfO<sub>2</sub>-Based RRAM with Superior Thermal Stability Based on Self-Limited TiO<sub>x</sub>
HfO<sub>2</sub>-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understandin...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-05-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/12/11/2426 |