High-Speed Response Si PIN Photodetector Fabricated and Studied for Visible and Near Infrared Spectral Detection
In the present work , PIN photodetector has been fabricated by vacuum evaporationtechnique, Al was evaporated on top side of an intrinsic – type silicon and In was evaporatedon down side and doped for each sides of an intrinsic silicon with thermal diffusion techniqueusing a furnace system, in this...
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2008-10-01
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| Series: | Engineering and Technology Journal |
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| Online Access: | https://etj.uotechnology.edu.iq/article_26848_2bcd68c4a0239948a88ab1614a39219c.pdf |