Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, 77, and 4.2 K from dc measurements made on v...

पूर्ण विवरण

ग्रंथसूची विवरण
मुख्य लेखकों: Arnout Beckers, Farzan Jazaeri, Christian Enz
स्वरूप: लेख
भाषा:English
प्रकाशित: IEEE 2018-01-01
श्रृंखला:IEEE Journal of the Electron Devices Society
विषय:
ऑनलाइन पहुंच:https://ieeexplore.ieee.org/document/8326483/