Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K
This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, 77, and 4.2 K from dc measurements made on v...
मुख्य लेखकों: | , , |
---|---|
स्वरूप: | लेख |
भाषा: | English |
प्रकाशित: |
IEEE
2018-01-01
|
श्रृंखला: | IEEE Journal of the Electron Devices Society |
विषय: | |
ऑनलाइन पहुंच: | https://ieeexplore.ieee.org/document/8326483/ |