Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K
This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, 77, and 4.2 K from dc measurements made on v...
| Автори: | , , |
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| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
IEEE
2018-01-01
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| Серія: | IEEE Journal of the Electron Devices Society |
| Предмети: | |
| Онлайн доступ: | https://ieeexplore.ieee.org/document/8326483/ |