Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K

Characterization and Modeling of 28-nm Bulk CMOS Technology Down to 4.2 K

This paper presents an experimental investigation, compact modeling, and low-temperature physics-based modeling of a commercial 28-nm bulk CMOS technology operating at cryogenic temperatures. The physical and technological parameters are extracted at 300, 77, and 4.2 K from dc measurements made on v...

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Hlavní autoři: Arnout Beckers, Farzan Jazaeri, Christian Enz
Médium: Článek
Jazyk:English
Vydáno: IEEE 2018-01-01
Edice:IEEE Journal of the Electron Devices Society
Témata:
28 nm bulk CMOS
cryo-CMOS
subthreshold swing
freeze-out
cryoelectronics
cryogenic
On-line přístup:https://ieeexplore.ieee.org/document/8326483/

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https://ieeexplore.ieee.org/document/8326483/

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